By Yung-Chun Wu,Yi-Ruei Jhan
This publication demonstrates the way to use the Synopsys Sentaurus TCAD 2014 model for the layout and simulation of 3D CMOS (complementary metal–oxide–semiconductor) semiconductor nanoelectronic units, whereas additionally delivering chosen resource codes (Technology Computer-Aided layout, TCAD). rather than the integrated examples of Sentaurus TCAD 2014, the sensible instances offered right here, in keeping with years of educating and study adventure, are used to interpret and research simulation result of the actual and electric houses of designed 3D CMOSFET (metal–oxide–semiconductor field-effect transistor) nanoelectronic devices.
The publication additionally addresses intimately the elemental concept of complex semiconductor equipment layout for the additional simulation and research of electrical and actual homes of semiconductor units. The layout and simulation applied sciences for nano-semiconductor units explored listed here are simpler in nature and consultant of the semiconductor undefined, and as such can advertise the advance of pioneering semiconductor units, semiconductor machine physics, and extra practically-oriented ways to instructing and studying semiconductor engineering.
The publication can be utilized for graduate and senior undergraduate scholars alike, whereas additionally supplying a reference consultant for engineers and specialists within the semiconductor undefined. Readers are anticipated to have a few initial wisdom of the field.
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Extra info for 3D TCAD Simulation for CMOS Nanoeletronic Devices
3D TCAD Simulation for CMOS Nanoeletronic Devices by Yung-Chun Wu,Yi-Ruei Jhan